Asymmetric source and drain structures in semiconductor devices

ABSTRACT

The present disclosure provides semiconductor devices with asymmetric source/drain structures. In one example, a semiconductor device includes a first group of source/drain structures on a first group of fin structures on a substrate, a second group of source/drain structures on a second group of fin structures on the substrate, and a first gate structure and a second gate structure over the first and the second group of fin structures, respectively, the first and second groups of source/drain structures being proximate the first and second gate structures, respectively, wherein the first group of source/drain structures on the first group of fin structures has a first source/drain structure having a first vertical height different from a second vertical height of a second source/drain structure of the second group of source/drain structures on the second group of fin structures.

BACKGROUND

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, challenges from both fabrication and design haveresulted in the development of three dimensional designs, such as finfield effect transistors (FinFETs). A typical FinFET is fabricated witha fin structure extending from a substrate, for example, by etching intoa silicon layer of the substrate. The channel of the FinFET is formed inthe vertical fin. A gate structure is provided over (e.g., overlying towrap) the fin structure. It is beneficial to have a gate structure onthe channel allowing gate control of the channel around the gatestructure. FinFET devices provide numerous advantages, including reducedshort channel effects and increased current flow.

As the device dimensions continue scaling down, FinFET deviceperformance can be improved by using a metal gate electrode instead of atypical polysilicon gate electrode. One process of forming a metal gatestack is forming a replacement-gate process (also called as a“gate-last” process) in which the final gate stack is fabricated “last”.However, there are challenges to implement such IC fabrication processesin advanced process nodes. Inaccurate and improper control of thedeposition and patterning process during the device structurefabrication may adversely deteriorate electrical performance of thedevice structures.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flow chart of an exemplary process for manufacturing adevice structure on a substrate in accordance with some embodiments;

FIG. 2 depicts a perspective view of a semiconductor device structure inaccordance with some embodiments; and

FIGS. 3, 4A-4D, 5A-5D, 6A-6D, 7A-7D, 8A-8D, 9A-9D, 10A-10D, 11A-11D,12A-12D, 13A-13D, 14A-14D, 15A-15D, 16A-16D, 17A-17D, 18A-18D and19A-19D depict cross-sectional views of the semiconductor devicestructure at different manufacturing stages of FIG. 1 in accordance withsome embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The present disclosure is generally related to semiconductor devices,and more particularly to replacement gates formed in semiconductordevices. The present disclosure provides methods for formingsource/drain structures with asymmetric profiles at different locationsof the semiconductor device so as to engineer electrical performance ofthe semiconductor devices. In one example, the asymmetric profiles ofthe source/drain structures may be obtained by forming the source/drainstructures with different dimensions and profiles. In another example,the asymmetric profiles of the source/drain structures may be obtainedby patterning the source/drain structures using etchants with highselectivity so as to selectively trim and/or pattern the source/drainstructures at different active regions with different patterning rates,rendering different resultant profiles of the source/drain structures atdifferent locations after the patterning process. Asymmetric profiles ofthe source/drain structures allow different electrical performance indifferent active regions (e.g., p-type or n-type regions) of thesemiconductor devices so as to provide a flexible engineering window fordevice electrical performance adjustment and alternation.Implementations of some aspects of the present disclosure may be used inother processes, in other devices, and/or for other layers. For example,other example devices can include planar FETs, Horizontal Gate AllAround (HGAA) FETs, Vertical Gate All Around (VGAA) FETs, and otherdevices. Some variations of the example methods and structures aredescribed. A person having ordinary skill in the art will readilyunderstand other modifications that may be made that are contemplatedwithin the scope of other embodiments. Although method embodiments maybe described in a particular order, various other method embodiments maybe performed in any logical order and may include fewer or more stepsthan what is described herein.

In a replacement gate process for forming a metal gate for a transistor,a dummy gate stack is formed over a substrate as a placeholder for anactual gate stack later formed thereon. A spacer structure is formedsurrounding the dummy gate stack. After source/drain features areformed, a contact etch stop layer (CESL) and interlayer dielectric (ILD)layer are formed adjacent to the spacer structure, the dummy gate stackis removed, leaving an opening surrounded by the spacer structure, CESLand ILD layer. Then, a metal gate is formed in the opening defined bythe spacer structure, CESL, and ILD.

The metal gate structure includes a gate dielectric layer, such as ahigh-k dielectric layer, an optional barrier layer, a work-functiontuning layer, and a gate metal electrode. Multiple deposition andpatterning processes may be used to form the work-function tuning layer,for example, to fine tune threshold voltage (Vt) of the transistor. Insome embodiments, the work-function tuning layer may utilize differentmaterials for different types of transistors, such as p-type FinFET orn-type FinFET, so as to enhance device electrical performance as needed.The barrier layer is optionally used to protect the gate dielectriclayer during the patterning processes.

FIG. 1 depicts an exemplary flow diagram of a process 100 performed toform a semiconductor device structure, such as a simplifiedsemiconductor FinFET device structure 201 depicted in FIG. 2. Otheraspects not illustrated in or described with respect to FIG. 2 maybecome apparent from the following figures and description. Thestructure in FIG. 2 may be electrically connected or coupled in a mannerto operate as, for example, one transistor or more. FIGS. 3-19D areschematic cross-sectional views of a portion of the substratecorresponding to various stages of the process 100 in accordance withsome embodiments. It is noted that the process 100 may be utilized toform any suitable structures, including the semiconductor devicestructure 201 depicted in FIGS. 2-19D or other semiconductor structuresnot presented herein.

The simplified FINFET device structure 201 depicted in FIG. 2 is formedon a substrate 20. The substrate 20 can be or include a bulksemiconductor substrate, a semiconductor-on-insulator (SOI) substrate,or another substrate. The semiconductor material of the substrate 20 caninclude or be a material selected from at least one of silicon (e.g.,crystalline silicon like Si<100> or Si<111>), silicon germanium,germanium, gallium arsenide, or another semiconductor material. Thesemiconductor material may be doped or undoped, such as with a p-type oran n-type dopant. In some embodiments wherein a SOI structure isutilized for the substrate 20, the substrate 20 may includesemiconductor material disposed on an insulator layer, which may be aburied insulator disposed in a semiconductor substrate, or which may bea glass or sapphire substrate. In embodiments depicted herein, thesubstrate 20 is a silicon containing material, such as a crystallinesilicon substrate. Moreover, the substrate 20 is not limited to anyparticular size, shape, or materials. The substrate 20 may be around/circular substrate having a 200 mm diameter, a 300 mm diameter, orother diameters, such as 450 mm, among others. The substrate 20 may alsobe any polygonal, square, rectangular, curved, or otherwise non-circularworkpiece, such as a polygonal substrate as needed.

Each fin structure 24 provides an active region where one or moredevices are formed. The fin structures 24 are fabricated using suitableprocesses including masking, photolithography, and/or etch processes. Inan example, a mask layer is formed overlying the substrate 20. Thephotolithography process includes forming a photoresist layer (resist)overlying the mask layer, exposing the photoresist layer to a pattern,performing a post-exposure bake process, and developing the photoresistlayer to pattern the photoresist layer. The pattern of the photoresistlayer is transferred to the mask layer using a suitable etch process toform a masking element. The masking element may then be used to protectregions of the substrate 20 while an etch process forms recesses 25 inthe substrate, leaving an extending fin, such as the fin structures 24.The recesses 25 may be etched using reactive ion etch (RIE) and/or othersuitable processes. Numerous other embodiments of methods to form a finstructure on a substrate may be utilized.

In an embodiment, the fin structures 24 are approximately 10 nanometer(nm) wide and in a range from approximately 10 nm to 60 nm in height,such as about 50 nm high. However, it should be understood that otherdimensions may be used for the fin structures 24. In one example, thefin structures 24 comprise a silicon material or another elementarysemiconductor, such as germanium, or a compound semiconductor includingsilicon carbide, gallium arsenic, gallium phosphide, indium phosphide,indium arsenide, and/or indium antimonide. The fin structures 24 mayalso be an alloy semiconductor including SiGe, GaAsP, AlInAs, AlGaAs,GaInAs, GaInP, GaInAsP, or a combination thereof. Further, the finstructures 24 may be doped using n-type and/or p-type dopants as needed.

As described, in an example, the plurality of fin structures 24 may beformed by etching a portion of the substrate 20 away to form therecesses 25 in the substrate 20. The recesses 25 may then be filled withisolating material that is recessed or etched back to form isolationstructures 26. Other fabrication techniques for the isolation structures26 and/or the fin structure 24 are possible. The isolation structures 26may isolate some regions of the substrate 20, e.g., active areas in thefin structures 24. In an example, the isolation structures 26 may beshallow trench isolation (STI) structures and/or other suitableisolation structures. The STI structures may be formed of silicon oxide,silicon nitride, silicon oxynitride, fluoride-doped silicate glass(FSG), a low-k dielectric material, and/or other suitable insulatingmaterial. The STI structures may include a multi-layer structure, forexample, having one or more liner layers.

A dummy gate structure 50 is formed over the fin structures 24. In theexample depicted in FIG. 2, the dummy gate structure 50 includes a gatedielectric layer 28, a gate electrode layer 30, and a hard mask 32. Itis noted that the dummy gate structure 50 may further include a cappinglayer and/or other suitable layers. The various layers in the dummy gatestructure 50 may be formed by suitable deposition techniques andpatterned by suitable photolithography and etching techniques. The dummygate structure 50 engages the fin structures 24 on two or three sides ofthe fin structure 24.

The term, “dummy”, as described here, refers to a sacrificial structurewhich will be removed in a later stage and will be replaced with anotherstructure, such as a high-k dielectric and metal gate structure in areplacement gate process. The replacement gate process refers tomanufacturing a gate structure at a later stage of the overall gatemanufacturing process. The gate dielectric layer 28 can be a dielectricoxide layer. For example, the dielectric oxide layer may be formed bychemical oxidation, thermal oxidation, atomic layer deposition (ALD),chemical vapor deposition (CVD), and/or other suitable methods. The gateelectrode layer 30 may be a poly-silicon layer or other suitable layers.For example, the gate electrode layer 30 may be formed by suitabledeposition processes such as low-pressure chemical vapor deposition(LPCVD) and plasma-enhanced CVD (PECVD). The hard mask 32 may be anymaterial suitable to pattern the dummy gate structure 50 with desiredfeatures/dimensions on the substrate.

In an embodiment, the various layers of the dummy gate structure 50 arefirst deposited as blanket layers. Then, the blanket layers arepatterned through a process including photolithography and etchingprocesses, removing portions of the blanket layers and keeping theremaining portions over the isolation structures 26 and the finstructures 24 to form the dummy gate structure 50.

In an example, the semiconductor device structure 201 includes a n-typeregion 202 a and an p-type region 202 b. One or more n-type devices,such as p-type FinFETs, may be formed in the n-type region 202 a, andone or more p-type devices, such as p-type FinFETs, may be formed in then-type region 202 a. The semiconductor device structure 201 may beincluded in an IC such as a microprocessor, memory device, and/or otherIC.

FIG. 2 illustrates a three-dimensional view of the semiconductor devicestructure 201. FIG. 2 also illustrates cross-sections A-A, B-B and C-C.FIGS. 4A-19A ending with an “A” designation illustrate cross-sectionalviews at various instances of processing stages of FIG. 1 correspondingto cross-section A-A. FIGS. 4B-19B ending with a “B” designationillustrate cross-sectional views at various instances of processingstages of FIG. 1 corresponding to cross-section B-B. FIGS. 4C-19C endingwith a “C” designation illustrate cross-sectional views at variousinstances of processing stages of FIG. 1 corresponding to cross-sectionC-C. FIGS. 4D-19D ending with a “D” designation illustrate top views ofa certain region of the semiconductor device structure 201, as indicatedin an area 90 of FIG. 2, at various instances of processing stages ofFIG. 1. The cross-section A-A and B-B are a cut-away plane perpendicularto an array of fin structures 24 (e.g., across source/drain regions ofthe fin structures 24) formed in the n-type region 202 a and p-typeregion 202 b respectively. The cross-section C-C is along a finstructure 24 (e.g., along a channel direction in the fin structure 24)through which a cut will be made in subsequent figures and description.Cross-sections A-A, B-B are perpendicular to cross-section C-C. In somefigures, some reference numbers of components or features illustratedtherein may be omitted to avoid obscuring other components or features;this is for ease of depicting the figures.

Referring back to the process 100 depicted in FIG. 1, the process 100begins at operation 102 by patterning a substrate 20, as depicted inFIG. 3, to form fin structures 24, as shown in FIGS. 4A-4D, in thesubstrate 20. The patterning process is performed to form recesses 25 inthe substrate 20 defining the fin structures 24 in the substrate 20, asshown in FIGS. 4A-4D. A mask (not shown) is used to facilitate formingthe fin structures 24 in the substrate 20. For example, one or more masklayers are deposited over the substrate 20, and the one or more masklayers are then patterned into the mask. In some examples, the one ormore mask layers may include or be silicon nitride, silicon oxynitride,silicon carbide, silicon carbon nitride, the like, or a combinationthereof, and may be deposited by chemical vapor deposition (CVD),physical vapor deposition (PVD), atomic layer deposition (ALD), oranother deposition technique. The one or more mask layers may bepatterned using photolithography. For example, a photo resist can beformed on the one or more mask layers, such as by using spin-on coating,and patterned by exposing the photo resist to light using an appropriatephotomask. Exposed or unexposed portions of the photo resist may then beremoved depending on whether a positive or negative resist is used. Thepattern of the photo resist may then be transferred to the one or moremask layers, such as by using a suitable etch process, which forms themask. The etch process may include a reactive ion etch (RIE), neutralbeam etch (NBE), inductive coupled plasma (ICP) etch, the like, or acombination thereof. The etching may be anisotropic. Subsequently, thephoto resist is removed in an ashing or wet strip processes, forexample.

At operation 104, an isolation structure 26 is formed in each recess 25,as shown in FIGS. 5A-5D. The isolation structure 26 may include or be aninsulating material such as an oxide (such as silicon oxide), a nitride,the like, or a combination thereof, and the insulating material may beformed by a high density plasma CVD (HDP-CVD), a flowable CVD (FCVD)(e.g., a CVD-based material deposition in a remote plasma system andpost curing to make it convert to another material, such as an oxide),the like, or a combination thereof. Other insulating materials formed byany acceptable process may be used. In the illustrated embodiment, theisolation structure 26 includes silicon oxide that is formed by a FCVDprocess. A planarization process, such as a Chemical Mechanical Polish(CMP), may remove any excess insulating material and any remaining mask(e.g., used to etch the recess 25 and form the fin structures 24) toform top surfaces of the insulating material and top surfaces of the finstructures 24 to be substantially coplanar.

At operation 106, upper portions of the fin structures 24 in the p-typeregion 202 b are removed and replaced with another material, as shown inFIGS. 6A-6D. In the example depicted herein, heteroepitaxial finstructures 602 may be formed by first etching upper portions of the finstructures 24 in the p-type region 202 b away from the substrate 20 and,then, epitaxially depositing the heteroepitaxial fin structures 602.During the etching and epitaxial deposition, the n-type region 202 a maybe masked by a hard mask. For example, the fin structures 24 can berecessed, and a material different from the fin structure 24 isepitaxially grown where the fin structures 24 are recessed, forming theheteroepitaxial fin structures 602. The epitaxial grown materials may bein situ doped during growth, which may obviate implanting of the finsalthough in situ and implantation doping may be used together. In theexample depicted herein, the heteroepitaxial fin structures 602 areepitaxially grown with a material for the p-type region 202 b differentfrom the material for the fin structure 24 in the n-type region 202 a.After epitaxially growing the heteroepitaxial fin structures 602, aplanarization process, such as a CMP, may be performed to remove themask on the n-type region 202 a and to planarize the fin structures 24,heteroepitaxial fins structures 602, and the isolation structures 26.

In one example, the heteroepitaxial fin structures 602 have a thicknessbetween about 30 nm and about 100 nm.

In one example, the heteroepitaxial fin structures 602 may be silicongermanium (Si_(x)Ge_(1-x), where x can be between approximately 0 and100), silicon carbide, pure or substantially pure germanium, a III-Vcompound semiconductor, a II-VI compound semiconductor, or the like. Forexample, materials for forming a III-V compound semiconductor includeInAs, AlAs, GaAs, InP, GaN, InGaAs, InAlAs, GaSb, AlSb, AlP, GaP, andthe like. In one specific example, the heteroepitaxial fin structures602 include a SiGe material.

At operation 108, the insulation structures 26 are recessed to formrecesses 702 above the insulation structures 26, as shown in FIGS.7A-7D. The isolation structure 26 is recessed such that the finstructures 24 and the heteroepitaxial fin structures 602 protrude frombetween neighboring isolation structures 26, which may, at least inpart, delineate the fin structures 24 and the heteroepitaxial finstructures 602 as active areas on the substrate 20. The isolationstructures 26 may be recessed using an acceptable etch process, such asone that is selective to the material of the insulating material. Forexample, a chemical oxide removal using a CERTAS® etch or an AppliedMaterials SICONI tool or dilute hydrofluoric (dHF) acid may be used.Further, top surfaces of the isolation structure 26 may have a flatsurface as illustrated, a convex surface, a concave surface (such asdishing), or a combination thereof, which may result from an etchprocess. In one example, the recess 702 has a depth 704 in a range fromabout 20 nm to about 60 nm.

At operation 110, a dummy gate structure 50 is formed on the substrate,as depicted in FIGS. 8A-8D. The dummy gate structure 50 is over andextends laterally perpendicularly to the fin structures 24 and theheteroepitaxial fin structures 602. Each dummy gate structure 50comprises a gate dielectric layer 28, a gate electrode layer 30, and ahard mask 32, as shown in FIG. 8C. In a replacement gate process, thegate dielectric layer 28 may be an interfacial dielectric. The gatedielectric layer 28, the gate electrode layer 30 and the hard mask 32for the dummy gate structure 50 may be formed by sequentially formingrespective layers, and then patterning those layers into the dummy gatestructure 50. For example, a layer for the interfacial dielectrics mayinclude or be silicon oxide, silicon nitride, the like, or multilayersthereof, and may be thermally and/or chemically grown on the finstructure 24 and the heteroepitaxial fin structures 602, or conformallydeposited, such as by PECVD, ALD, PEALD or another deposition technique.A layer for the gate electrode layer 30 may include or be silicon (e.g.,polysilicon) or another material deposited by CVD, PVD, or anotherdeposition technique. A layer for the hard mask 32 may include or besilicon nitride, silicon oxynitride, silicon carbon nitride, the like,or a combination thereof, deposited by CVD, PVD, ALD, or anotherdeposition technique. The layers for the hard mask 32, gate electrodelayer 30, and the gate dielectric layer 28 may then be patterned, forexample, using photolithography and one or more etch processes, likedescribed above, to form the hard mask 32, gate electrode layer 30, andgate dielectric layer 28 for each dummy gate structure 50.

In some embodiments, after forming the dummy gate structure 50, lightlydoped drain (LDD) regions (not specifically illustrated) may be formedin the active areas. For example, dopants may be implanted into theactive areas (e.g., fin structures 24 or heteroepitaxial fin structures602) using the dummy gate structures 50 as masks. Example dopants caninclude or be, for example, boron for a p-type device and phosphorus orarsenic for an n-type device, although other dopants may be used. TheLDD regions may have a dopant concentration in a range from about 10¹⁵cm⁻³ to about 10¹⁷ cm⁻³.

At operation 112, a first mask layer 902 is formed on a first region,such as the p-type region 202 b, of the substrate 20, as shown in FIGS.9A-9D. The first mask layer 902 serves as a mask layer that may protectthe heteroepitaxial fin structures 602 from deposition or etching in thesubsequent processes. It is noted that the first mask layer 902 may befirst formed as a blanket layer on the substrate 20 and later patternedand etched to selectively form on the p-type region 202 b of thesubstrate with a desired profile. The first mask layer 902 may also beformed to be a spacer feature formed on sidewalls of the dummy gatestructures 50 in the n-type region 202 a, as shown in FIG. 9C. The firstmask layer 902 is formed conformally on the substrate 20. In oneexample, the first mask layer 902 is formed from a dielectric material.For example, the first mask layer 902 may be fabricated from a materialcomprising silicon nitride (SiN), silicon oxynitride (SiON), siliconoxide (SiO2), silicon oxycarbide (SiOC), amorphous carbon, carboncontaining materials, or the like. In one specific example, the firstmask layer 902 is fabricated from a silicon nitride material.

In one example, the first mask layer 902 may be formed by any suitabledeposition process. In one specific example, the first mask layer 902may be formed by an atomic layer deposition (ALD) process or a chemicalvapor deposition (CVD) process. A photoresist may then be formed overthe first mask layer 902 in the p-type region 202 b, and an anisotropicetch process may be performed on the first mask layer 902 in the n-typeregion 202 a to form the spacer features and expose portions of the finstructures 24 in the n-type region 202 a while maintaining the firstmask layer 902 in the p-type region 202 b. The photoresist may then beremoved in an ashing or wet strip processes, for example.

At operation 114, an epitaxial deposition process is performed to growan n-type epi-material 304 onto the fin structure 24 in the n-typeregion 202 a, as shown in FIGS. 10A-10D. The n-type epi-material 304 maybe later utilized to form and serve as source/drain or source/drainextension regions in the n-type region 202 a. The epitaxial growth ofthe n-type epi-material 304 naturally grows onto silicon materials ofthe fin structure 24 and a portion of the substrate 20, as shown inFIGS. 10A and 10C. The heteroepitaxial fin structures 602 in the p-typeregion 202 b is free from the deposition of the n-type epi-material 304due to the protection of the first mask layer 902, as shown in FIG. 10B.The structure or shape of the n-type epi-material 304 formed on the finstructure 24 may be controlled by the crystallographic orientation ofthe silicon material in certain planes, as shown in FIG. 10A. Thus,different growth rates are often found at different surfaces of finstructure 24, such as different growth rates found from a horizontalsurface or from a vertical surface. In the example depicted in FIG. 10A,the n-type epi-material 304 is formed atop of the fin structure 24having a vertical growth rate relatively greater than a horizontalgrowth rate, forming an oval like structure around and above the finstructure 24, as shown in FIG. 10A. It is noted that the structure andthe shape of the n-type epi-material 304 may be in any form as needed.It is noted that the oval like structure of the n-type epi-material 304may be later utilized to form and serve as source/drain and thesource/drain extension of a transistor structure.

In some examples, the n-type epi-material 304 formed on each finstructure 24 may or may not be merged. Although the example depicted inFIG. 10A shows that the n-type epi-material 304 formed on the finstructure 24 are not merged, it is noted that the n-type epi-material304 may be merged with certain side of the n-type epi-material 304 onone of the fin structures 24 overlapped with the n-type epi-material 304on another one of the fin structures 24 due to the constrained spacingbetween the fin structures 24.

In one example, the n-type epi-material 304 may include n-type dopedsilicon material formed on the fin structures 24 in the n-type region202 a. Suitable example n-type dopants that may be utilized for then-type epi-material 304 include phosphorus (P), arsenic (As), antimony(Sb), or the like. The n-type epi-material 304 is formed by molecularbeam epitaxy (MBE), liquid phase epitaxy (LPE), vapor phase epitaxy(VPE), selective epitaxial growth (SEG), the like, or a combinationthereof. The n-type epi-material 304 may be in situ doping duringepitaxial growth and/or by implanting dopants into the epitaxysource/drain regions. The n-type epi-material 304 may have a dopantconcentration in a range from about 10¹⁹ cm⁻³ to about 510²² cm⁻³.Hence, a source/drain region may be delineated by doping (e.g., byimplantation and/or in situ during epitaxial growth, if appropriate)and/or by epitaxial growth, if appropriate, which may further delineatethe active area in which the source/drain region is delineated.

In one specific example, the n-type epi-material 304 is a siliconmaterial or phosphorus (P) doped silicon material (Si_(x)P_(y)) or thelike.

In one embodiment, the n-type epi-material 304 may be formed having afirst vertical height 302 from a surface 306 of the isolation structure26 to a top 305 of the n-type epi-material 304, as shown in FIG. 10A. Inone example, the first vertical height 302 of the n-type epi-material304 is controlled to be in a range from about 20 nm to about 80 nm.

At operation 116, the first mask layer 902 is removed from the substrate20, as shown in FIGS. 11A-11D, particularly, in the p-type region 202 bof the substrate 20. It is noted that a portion of the first mask layer902 remains on the substrate 20, along the sidewall of the dummy gatestructure 50, as shown in FIG. 11C, so as to serve as a spacer featurearound the dummy gate structure 50 in both the n-type and p-type regions202 a, 202 b. The first mask layer 902 is removed by any suitableetching or patterning process as needed. It is noted that the first masklayer 902 is removed with minimum damage to the n-type epi-material 304with minimum height/width loss. In one example, the first mask layer 902may be removed by utilizing an inductively coupled plasma (ICP)anisotropic etching process in a RF source power in a range up to 2000Watts. The process pressure may be controlled in a range from 10 mTorrto 100 mTorr. The process temperature may be controlled from roomtemperature to about 140 degrees Celsius. A gas mixture including CH3Fand O2 gas may be utilized to selectively etch away the first hard mask902 on the top and sidewall of the fin structures 602 with minimumdamage to the sidewalls or some portions of the dummy gate structure 50.

At operation 118, similar to the first mask layer 902, a second masklayer 310 is formed on the n-type region 202 a of the substrate 20, asshown in FIGS. 12A-12D. The second mask layer 310 may be fabricated froma material similar to the first mask layer 902. Similarly, the secondmask layer 310 may be first formed as a blanket layer on the substrate20 and later patterned and etched to selectively form on the n-typeregion 202 a of the substrate with a desired profile, as shown in FIGS.12A and 12C-12D. In one example, the second mask layer 310 is formedfrom a dielectric material. For example, the second mask layer 310 maybe fabricated from a material comprising silicon nitride (SiN), siliconoxynitride (SiON), silicon oxide (SiO₂), silicon oxycarbide (SiOC),amorphous carbon, carbon containing materials, or the like. In onespecific example, the second mask layer 310 is fabricated from a siliconnitride material. In one example, the second mask layer 310 may beformed by any suitable deposition process. In one specific example, thesecond mask layer 310 may be formed by an atomic layer deposition (ALD)process or a chemical vapor deposition (CVD) process.

It is noted that the second hard mask 310 as well as the first hard mask902 may be mostly and/or entirely removed from the substrate, thusleaving no spacer features formed on the substrate at this stage. Inthis particular embodiment, new spacer features with desiredconformality may be later formed after operation 122 but prior to theoperation 124. New spacer features may be formed by suitable depositiontechniques prior to forming an contact etching stop layer (CESL) 318 anda first interlayer dielectric (ILD) layer 342 at operation 124, whichwill be described in greater detail below in FIGS. 15A-15D.

At operation 120, an epitaxial deposition process is performed to grow ap-type epi-material 312 onto the heteroepitaxial fin structures 602, asshown in FIGS. 13A-13D, in the p-type region 202 b. The p-typeepi-material 312 may be later utilized to form and serve as thesource/drain or source/drain extension regions in the p-type region 202b. The epitaxial growth of the p-type epi-material 312 naturally growsonto silicon materials of the heteroepitaxial fin structures 602 and aportion of the substrate 20, as shown in FIGS. 13B and 13C. The n-typeepi-material 304 protected by the second mask layer 310 in the n-typeregion 202 a is free from the deposition of the p-type epi-material 312,as shown in FIG. 13A. The epitaxial growth of the silicon naturallygrows onto silicon materials, such as the diamond like top structure,atop the heteroepitaxial fin structures 602, as shown in FIG. 13B. Thenatural shape of the diamond like top structure is controlled by thecrystallographic orientation of the silicon material in <111> plane,which normally has the slowest epitaxial growth rate. Thus, during theepitaxial deposition process, the p-type epi-material 312 may grow bothvertically and horizontally to form facets, which may correspond tocrystalline planes of the heteroepitaxial fin structures 602. Thus, thegrowth rates of the diamond like top structure of the p-typeepi-material 312 are often different on different surfaces of thediamond like top structure of the p-type epi-material 312, such asdifferent growth rates found from a horizontal surface or from avertical surface. While different growth rates are often occurring atdifferent surfaces with different crystallographic orientations, theresultant shape of the p-type epi-material 312 then has a diamond liketop structure, rather than a horizontal planar surface. The diamond liketop structure of the p-type epi-material 312 may later be utilized toform source/drain and source/drain extension regions of a transistorstructure. Example dopants for the source/drain regions can include orbe, for example, boron for a p-type device and phosphorus or arsenic foran n-type device, although other dopants may be used. It is noted thatthe structure and the shape of the p-type epi-material 312 may be in anyform as needed. It is noted that the diamond like structure of thep-type epi-material 312 may be later utilized to form source/drain andthe source/drain extension of a transistor structure.

In some examples, the p-type epi-material 312 formed on eachheteroepitaxial fin structures 602 may or may not be merged. Althoughthe example depicted in FIG. 14B shows that the p-type epi-material 312formed on the heteroepitaxial fin structures 602 are not merged, it isnoted that the p-type epi-material 312 may be merged with certain sideof the p-type epi-material 312 on one of the heteroepitaxial finstructures 602 overlapped with the p-type epi-material 312 on anotherone of the heteroepitaxial fin structures 602 due to the constraintspacing between the heteroepitaxial fin structures 602.

In one example, the p-type epi-material 312 may include p-type dopedsilicon material formed on the heteroepitaxial fin structures 602 in thep-type region 202 b. Suitable example p-type dopants or suitable dopantsthat may be utilized for p-type epi-material 312 include boron (B),gallium (Ga), aluminum (Al), germanium (Ge) or the like. The p-typeepi-material 312 is formed by molecular beam epitaxy (MBE), liquid phaseepitaxy (LPE), vapor phase epitaxy (VPE), selective epitaxial growth(SEG), the like, or a combination thereof. The p-type epi-material 312may be in situ doping during epitaxial growth and/or by implantingdopants into the epitaxy source/drain regions. The p-type epi-material312 may have a dopant concentration in a range from about 10¹⁹ cm⁻³ toabout 510²² cm⁻³. Hence, a source/drain region may be delineated bydoping (e.g., by implantation and/or in situ during epitaxial growth, ifappropriate) and/or by epitaxial growth, if appropriate, which mayfurther delineate the active area in which the source/drain region isdelineated.

In one specific example, the p-type epi-material 312 is a silicongermanium (SiGe) or boron (B) doped silicon material (Si_(x)B_(y)) orthe like.

In one embodiment, the p-type epi-material 312 may be formed having asecond vertical height 320 from the surface 306 of the isolationstructure 26 to a top 314 of the p-type epi-material 312, as shown inFIG. 13B. In one example, the second height 320 of the p-typeepi-material 312 is in a range from about 20 nm to about 80 nm.

It is noted that the first vertical height 302 and the second verticalheight 320 of the n-type epi-material 304 and the p-type epi-material312 may be individually controlled to be formed at different ranges fordifferent electrical performance requirements. For example, the firstvertical height 302 of the n-type epi-material 304 may be configured tobe greater (e.g., higher) than the second vertical height 320 of thep-type epi-material 312. It is believed that the greater height of thefirst vertical height 302 of the n-type epi-material 304 in the n-typeregion 202 a may provide a semiconductor device with higher electronmobility, device speed and lower R_(C) (e.g., lower contact resistance),as the electrical performance of the n-type region 202 a is controlledby electrons (e.g., typically have greater conductivity), rather thanthe holes in the p-type region 202 b. Thus, by forming the n-typeepi-material 304 having the first vertical height 302 greater than thesecond vertical height 320 of the p-type epi-material 312, theelectrical device performance of the semiconductor devices may beadjusted and altered as needed. In one example, the greater height ofthe first vertical height 302 of the n-type epi-material 304 may beobtained by adjusting deposition time during the epitaxial depositionprocess at operation 114 and 120.

In one example, the first vertical height 302 of the n-type epi-material304 is controlled to be in a range from about 8% to about 20%, such asabout 10%, greater than the second vertical height 320 of the p-typeepi-material 312.

Furthermore, the greater height (e.g., dimension) of the n-typeepi-material 304 is also believed to provide a greater contact surfacearea (e.g., greater conductive surface area) when later in contact witha conductive feature in a contact trench fabrication process. Detailsregarding the conductive feature in the contact trench fabricationprocess will be described later below with reference to FIGS. 18A-18Dand 19A-19D.

At operation 122, similar to the removal of the first mask layer 902,the second mask layer 310 is removed from the substrate 20, as shown inFIGS. 14A-14D, particularly, in the n-type region 202 a of the substrate20. The second mask layer 310 is removed by any suitable etching orpatterning process as needed. It is noted that the second mask layer 310is removed with minimum damage to the p-type epi-material 312 and n-typeepi-material 304 with minimum height/width loss.

At operation 124, a contact etching stop layer (CESL) 318 and a firstinterlayer dielectric (ILD) layer 342 are sequentially formed on thesubstrate 20, as shown in FIGS. 15A-15D, covering the dummy gatestructure 50, as well as the p-type epi-material 312 and n-typeepi-material 304. The CESL 318 can provide a mechanism to stop an etchprocess when forming, e.g., contacts or vias. The contact etch stoplayer (CESL) 318 may be formed of a dielectric material having adifferent etch selectivity from adjacent layers or components. The CESL318 is conformally formed on surfaces of the p-type epi-material 312 andn-type epi-material 304, sidewalls and top surfaces of the first masklayer 902 (e.g., the spacer feature), top surfaces of the hard mask 32of the dummy gate structure 50, and top surfaces of the isolationstructures 26. The CESL 318 may comprise or may be a nitrogen containingmaterial, a silicon containing material, and/or a carbon containingmaterial and may be deposited by CVD, PECVD, ALD, or another depositiontechnique. Furthermore the CESL 318 may comprise or may be siliconnitride, silicon carbon nitride, carbon nitride, silicon oxynitride,silicon carbon oxide, the like, or a combination thereof. The CESL 318may be deposited by a deposition process, such as a Plasma Enhanced ALD(PEALD), CVD, or another deposition technique.

The first ILD layer 342 is formed over the CESL 318, as shown in FIGS.15A-15C. The first ILD layer 342 may include materials such astetraethylorthosilicate (TEOS) oxide, un-doped silicate glass, silicondioxide, a low-k dielectric material (e.g., a material having adielectric constant lower than silicon dioxide), doped silicon oxidesuch as borophosphosilicate glass (BPSG), fused silica glass (FSG),phosphosilicate glass (PSG), boron doped silicon glass (BSG),SiO_(x)C_(y), Spin-On-Glass, Spin-On-Polymers, silicon carbon material,a compound thereof, a composite thereof, and/or other suitabledielectric materials. The first ILD layer 342 may be deposited by aspin-on, CVD, FCVD, PECVD, PVD, or other suitable deposition technique.In an embodiment, the first ILD layer 342 is formed by a flowable CVD(FCVD) process to fill between neighboring dummy gate structures 50. Itis noted that after the thermal annealing process, the first ILD layer342 may be planarized, such as by a CMP, to provide a planar surface asneeded.

At operation 126, subsequently, the dummy gate structure 50 is removedfrom the substrate 20 to allow a replacement gate structure 55, such asa metal gate structure, to be formed therein to continue manufacturingthe semiconductor device structure 201, as shown in FIGS. 16A-16D. Whileremoving the dummy gate structure 50 from the substrate 20, a series ofplasma etching, wet etching, or patterning process is performed. Afterthe dummy gate structure 50 is removed, the replacement gate structure55 may then be filled and formed in the place where the dummy gatestructure 50 is removed and replaced. The replacement gate structure 55may be a metal gate structure including an interfacial layer (notshown), a high dielectric constant dielectric layer 93, a work functiontuning layer 92 and a metal electrode structure 91 formed therein toform the metal gate structure 55, as shown in FIG. 16C specifically.

At operation 128, a second interlayer dielectric (ILD) layer 344 isformed on the first ILD layer 342 covering the replacement gatestructure 55, as depicted in FIGS. 17A-17D. The second ILD layer 344 maycomprise materials similar to the first ILD layer 342 fabricated by asuitable deposition technique similarly described above when forming thefirst ILD layer 342.

At operation 130, a contact trench 57 is formed through the second ILDlayer 344, the first ILD layer 342 and the CESL 318 to expose at leastportions of a portion of the p-type epi-material 312 (shown as 312 a,312 b, 312 c, 312 d in FIG. 18B) and n-type epi-material 304 (shown as304 a, 304 b, 304 c, 304 d in FIG. 18A) (e.g., the epitaxy source/drainregions), as shown in FIG. 18A-18D. The contact trench 57 will laterallow a conductive feature to be formed therein. The second ILD layer344, the first ILD layer 342, and the CESL 318 may be patterned to formthe contact trench 57 therein, for example, using photolithography andone or more etch processes.

In one example, the contact trench 57 may be formed by an etchingprocess that may efficiently control the selective etching rate to thep-type epi-material 312 a, 312 b, 312 c, 312 d over the n-typeepi-material 304 a, 304 b, 304 c, 304 d. The etching process iscontrolled to etch a portion of the p-type epi-material 312 b, 312 c andn-type epi-material 304 b, 304 c away from the substrate 20, as shownparticularly in FIGS. 18A and 18B. In this example, at least a portionof the two neighboring n-type epi-materials 304 b, 304 c formed on thefin structures 24 at the n-type region 202 a is etched away, defining arecess 62 b, 62 c (e.g., epi-material loss) in the top portion of theneighbor n-type epi-materials 304 b, 304 c while maintaining thesurrounding n-type epi-materials 304 a, 304 d intact and covered by theCESL 318, the first and the second ILD layers 342, 344, as shown in FIG.18A. Similarly, at least a portion of the two neighboring p-typeepi-materials 312 b, 312 c formed on the heteroepitaxial fin structures602 at the p-type region 202 b is etched away, defining a recess 64 b,64 c in the top portion of the neighbor p-type epi-materials 312 b, 312c while maintaining the surrounding p-type epi-materials 312 a, 312 dintact and covered by the CESL 318, the first and the second ILD layers342, 344, as shown in FIG. 18B. It is noted that the location of thecontact trench 57 is predetermined so as to form the contact trench 57that exposes the center two neighboring n-type epi-materials 304 b, 304c and p-type epi-materials 312 b, 312 c, which will be later in contactwith a conductive feature filled and formed in the contact trench 57.

It is believed that the recesses 62 b, 62 c, 64 b, 64 c increase theoverall surface area (e.g., from a facet top 314 or a round top 305 tosubstantially flat top surfaces 72 b, 72 c, 74 b, 74 c) in contact witha conductive feature later formed therearound, so that the electricalperformance of the semiconductor device may be adjusted and altered asneeded. The greater epi-material loss often creates the greater surfacearea exposed for the source/drain structures to be contact with theconductive feature, thus enhancing the electrical performance of thesemiconductor device, such as low contact resistance (R_(C)). Thus, astep height 352, 354 is defined between the top 305, 314 and a topsurface 72 b, 74 b of the n-type and p-type epi-materials 304 b, 312 brespectively in FIGS. 18A and 18B. The step height 352 defined in then-type region 202 a may be different form the step height 354 defined inthe p-type region 202 b due to the different etching rates performed onthe different materials from the n-type and p-type epi-materials 304 b,312 b. In the etching process wherein a greater etching rate is selectedto etch the n-type epi-materials 304 b in the n-type region 202 a overthe p-type epi-materials 312 b, the amount of the n-type epi-materials304 b being etched away is greater than the amount of the p-typeepi-materials 312 b, thus resulting in a greater step height 352 thanthe step height 354 in the p-type region 202 b. In contrast, in theetching process wherein a greater etching rate is selected to etch thep-type epi-materials 312 b in the p-type region 202 b over the n-typeepi-materials 304 b, the amount of the p-type epi-materials 312 b beingetched away is greater than the amount of the n-type epi-materials 304b, thus resulting in a greater step height 354 than the step height 352in the n-type region 202 a.

As discussed above, higher flow flux of the electrons in the n-typeregion 202 a (from the n-type dopants) often creates higher electronmobility, current flow and low contact resistance in the semiconductordevice, thus enhancing the electrical performance, particularly in NMOS.As a result, a higher step height 352 over the n-type epi-material 304 bin the n-type region 202 a is desired. In one example, the step height352 in the n-type region 202 a is at least about 5% higher, such asabout at least 10% higher, than the step height 354 in the p-type region202 b. In one specific example, the step height 352 in the n-type region202 a is at least about 10%, and more particularly, at least about 20%,higher than the step height 354 in the p-type region 202 b. As the stepheight 352 in the n-type region 202 a is higher than the step height 354in the p-type region 202 b, the remaining height 353 (in verticaldirection) of the n-type epi-material 304 b in the n-type region 202 ais less than the remaining height 355 (in vertical direction) of thep-type epi-material 312 b in the p-type region 202 b.

In one example, the step height 352 in the n-type region 202 a is in arange from about 10 nm to about 20 nm and the step height 354 in thep-type region 202 b is in a range from about 0.1 nm to about 5 nm.

In one example, the step height 352 (Hn) and the step height 354 (Hp)may have a height ratio (Hn/Hp) greater than 1.1 when the first height302 (H1) and the second height 320 (H2) have a height ratio (H1/H2) in arange from 0.9-1.1. In another example, the step height 352 (Hn) and thestep height 354 (Hp) may have a height ratio (Hn/Hp) in a range from0.9-1.1 when the first height 302 (H1) and the second height 320 (H2)have a height ratio (H1/H2) greater than 1.1. In yet another example,the step height 352 (Hn) and the step height 354 (Hp) may have a heightratio (Hn/Hp) greater than 1.1 when the first height 302 (H1) and thesecond height 320 (H2) have a height ratio (H1/H2) greater than 1.1. Itis noted that the height ratio between the step heights 352, 354 (Hn,Hp) or between the first and the second height 302, 320 (H1, H2) may bein any ratio combinations as described above.

In one example, step height 352 (Hn) and the step height 354 (Hp) mayhave a height ratio (Hn/Hp) greater than 1.1. In another example, thestep height 352 (Hn) and the step height 354 (Hp) may have a heightratio (Hn/Hp) in a range from 0.9-1.1. In yet another example, the firstheight 302 (H1) and the second height 320 (H2) have a height ratio(H1/H2) in a range from 0.9-1.1. In still another example, the firstheight 302 (H1) and the second height 320 (H2) have a height ratio(H1/H2) greater than 1.1. It is noted that the height ratio between thestep heights 352, 354 (Hn, Hp) or between the first and the secondheight 302, 320 (H1, H2) may be in any ratio combinations as describedabove.

In one embodiment, the etching process utilized to form the contacttrench 57 may be a plasma etching process. The plasma etching processmay be performed by supplying an etching gas mixture into a plasmaprocessing chamber in which the substrate 20 may be placed. The etchinggas mixture may include a carbon fluorine gas, an oxygen containing gas,an inert gas, and a passivation gas. The passivation gas supplied in theetching gas mixture is configured to form a passivation layer over thep-type epi-materials 312 b while etching predominately the n-typeepi-materials 304 b so that the n-type epi-materials 304 b may be etchedat an etching rate greater than the etching rate for etching the p-typeepi-materials 312 b. In one example, the passivation gas is a sulfurcontaining gas. It is believed that the sulfur elements from thepassivation gas may react with the germanium elements in the SiGe fromthe p-type epi-materials 312 b, 312 c so as to form the passivationlayer on the p-type epi-materials 312 b, 312 c during the patterningprocess. As a result, the aggressive etchants from the carbon fluorinegas may predominately etch the n-type epi-materials 304 b, 304 c in then-type region 202 a, resulting in the greater step height 352 in then-type region 202 a, while leaving the p-type epi-materials 312 b, 312 cin the p-type region 202 b protected by the sulfur containingpassivation layer. In one example, the passivation gas in the etchinggas mixture is carbonyl sulfide (COS) and the like. Suitable examples ofthe carbon fluorine gas include CF₄, C₂F₂, CHF₃, CH₃F, C₂F₆, C₄F₆, C₄F₈and the like. In one example, the etching gas mixture includes CF₄, O₂,Ar and COS.

During the etching process, the substrate temperature may be controlledat greater than room temperature, such as greater than 60 degreesCelsius, such as in a range from 60 degrees Celsius to 150 degreesCelsius, for example, particular from 80 degrees Celsius and about 140degrees Celsius.

As discussed above, it is noted that the electrical performance of thesemiconductor device may be adjusted in the operation 130 by utilizing apatterning gas mixture with high selectivity that provides differentetch rates to etch the n-type and p-type epi-materials 304, 312respectively. As a result, the recesses 62 b, 62 c, 64 b, 64 c areformed in portions of the n-type and p-type epi-materials 304, 312. Therecesses 62 b, 62 c, 64 b, 64 c formed on the n-type and p-typeepi-materials 304, 312 create greater exposed contact surface area to bein contact with the conductive feature later formed thereon so as toenhance electrical performance of the semiconductor devices. Similarly,as discussed above in operation 114 and 120, different deposition timesmay be utilized at operations 114 and 120 respectively to grow then-type and p-type epi-materials 304, 312 with different first and thesecond vertical heights 302, 320 so that the electrical performance mayalso be enhanced by grow a greater first vertical height 302 (e.g.,greater dimension of the epi-materials that create greater contactsurface area) of the n-type epi-material 304 to increase electronmobility, electron current density and reduce contact resistance.

In some examples, the first vertical height 302 and the second verticalheight 320 of the n-type and p-type epi-materials 304, 312 may beconfigured to be substantially similar at operations 114 and 120 whileproviding a selective etching process at operation 130 to predominatelyetching the n-type epi-material 304 to provide the recess 62 b, 62 cwith the step height 352 in the n-type region 202 a greater than thestep height 354 in the p-type region 202 b so as to provide a greatersurface contact area (e.g., greater loss in the n-type epi-material 304)to the conductive feature later formed thereon.

In other examples, the etching process at operation 130 may beconfigured to have a substantially similar etching rate over the n-typeand p-type epi-materials 304, 312 so that the step heights 352, 354 aresubstantially similar while the first height 302 of the n-typeepi-material 304 formed from operation 114 is configured to be greaterthan the second height 320 of the p-type epi-material 312 formed fromthe operation 120 by different deposition time management. Thus, agreater contact surface area in the n-type epi-material 304 may also beobtained due to the greater first vertical height 302 in the n-typeepi-material 304 compared to the second vertical height 320 in thep-type epi-materials 312 due to the different dimension/profile of then-type and p-type epi-material 304, 312.

In yet another example, the electrical performance may be adjusted andenhanced by doing both above, including adjusting the deposition time atoperation 112 and 120 to grow first vertical height 302 of the n-typeepi-material 304 greater than the second vertical height 320 of thep-type epi-material 312 (e.g., increase of the surface contact area) andalso forming the step height 352 in the n-type region 202 a greater thanthe step height 354 in the p-type region 202 b (e.g., also increase ofthe surface contact area).

At operation 132, a first metal silicide layer 398 is then formed on then-type epi-material 304 b, 304 c, and a second metal silicide layer 399is formed on the p-type epi-material 312 b, 312 c. A conductive feature60 is then formed on the first and second metal silicide layers 398, 399filling the contact trench 57, as shown in FIGS. 19A-19D. As discussedabove, the greater step height 352 in the n-type region 202 a definedfrom the recess 62 b, 62 c increases the surface area on which the firstmetal silicide layer 398 is formed, thus resulting in the first metalsilicide layer 398 having a contact surface area (e.g., contact areabetween the metal silicide layer and the conductive feature) greaterthan a contact surface area of the second metal silicide layer 399 tothe conductive feature 60.

It is noted that after the first and second metal silicide layers 398,399 are formed, the conductive feature 60 formed in the contact trench57 may include an adhesion layer (not shown), a barrier layer (notshown) on the adhesion layer, and a conductive material (not shown) onthe barrier layer, for example, in total referred as the conductivefeature 60 in the contact trench 57. The first and second metal silicidelayers 398, 399 may be formed on the exposed surface defined by therecesses 62 b, 62 c, 64 b, 64 c defined on the n-type and p-typeepi-materials 304 b, 304 b, 312 b, 312 c of the epitaxy source/drainregions by reacting upper portions of the n-type and p-typeepi-materials 304 b, 304 b, 312 b, 312 c with the adhesion layer (notshown) and possibly, the barrier layer (not shown). The conductivematerial can be deposited on the barrier layer and fill the contacttrench 57, forming the conductive feature 60. After the conductivematerial is deposited, excess conductive material, barrier layer, andadhesion layer may be removed by using a planarization process, such asa CMP, for example. The planarization process may remove excessconductive material, barrier layer, and adhesion layer from above a topsurface of the second ILD layer 344. Hence, top surfaces of theconductive feature 60 and the second ILD layer 344 may be substantiallycoplanar. The conductive feature 60 may be or may be referred to ascontacts, plugs, etc.

Although not intended to be limiting, one or more embodiments of thepresent disclosure provide many benefits to a semiconductor device andthe formation thereof. For example, embodiments of the presentdisclosure can provide methods for forming asymmetric source/drainstructures in different regions of the substrate so as to enhance theelectrical performance of the semiconductor devices. The asymmetricsource/drain structures may be obtained by epi-growing n-typeepi-material in the n-type region with different profiles from thep-type epi-material in the p-type region. Furthermore, the asymmetricsource/drain structures may also be obtained by utilizing a selectiveetching process to predominantly etch n-type epi-material in the n-typeregion to create greater etch n-type epi-material loss (e.g., greatersurface area exposed to the conductive feature in the contact trench) soas to enhance the electrical performance. The asymmetric source/drainstructures may be obtained by performing either one of the above processor both as needed.

In one embodiment, a semiconductor device includes a first group ofsource/drain structures on a first group of fin structures on asubstrate, a second group of source/drain structures on a second groupof fin structures on the substrate, and a first gate structure and asecond gate structure over the first and the second group of finstructures, respectively, the first and second groups of source/drainstructures being proximate the first and second gate structures,respectively, wherein the first group of source/drain structures on thefirst group of fin structures has a first source/drain structure havinga first vertical height different from a second vertical height of asecond source/drain structure of the second group of source/drainstructures on the second group of fin structures. In an embodiment, thefirst group of the source/drain structures further includes a thirdsource/drain structure having a third vertical less than the firstvertical height of the first source/drain structure. In an embodiment,the second group of the source/drain structures further includes afourth source/drain structure having a fourth vertical height less thanthe second vertical height of the second source/drain structure. In anembodiment, the third vertical height of the third source/drainstructure is less than the fourth vertical height of the fourthsource/drain structure. In an embodiment, a first step height is definedbetween the first vertical height and the third vertical height and asecond step height is defined between second vertical height and thefourth vertical height, wherein the first step height is at least about5% higher than the second step height. In an embodiment, a first metalsilicide layer is on the third source/drain structures and a secondmetal silicide layer on the fourth source/drain structures, wherein thefirst metal silicide layer has a contact surface area greater than acontact surface area of the second metal silicide layer. In anembodiment, a first and a second conductive features is formed on thefirst and the second metal silicide layers respectively. In anembodiment, the third source/drain structure has a surface area greaterthan a surface area of the fourth source/drain structure. In anembodiment, the first vertical height of the first source/drainstructure is about 8% and about 20% greater than the second verticalheight of the second source/drain structure. In an embodiment, the firstgroup of source/drain structures comprises n-type epi-material, and thesecond group of the source/drain structures comprises p-typeepi-material.

In another embodiment, a semiconductor device includes a first activearea and a second active area on a substrate, wherein the first activearea comprises a first source/drain structure formed over a first finstructure, and the second active area comprises a second source/drainstructure over a second fin structure, a gate structure over the firstand the second fin structures, the first and second source/drainstructures being proximate the gate structure, a first metal silicidelayer on the first source/drain structure in the first active area, asecond metal silicide layer on the second source/drain structure in thesecond active area and a first and second conductive features on thefirst and the second metal silicide layers respectively, wherein thefirst metal silicide layer has a first contact surface area to theconductive feature greater than a second contact surface area of thesecond metal silicide layer to the conductive feature. In an embodiment,the first source/drain structure has a first surface area contacting thefirst metal silicide layer greater than a second surface area of thesecond source/drain structure contacting the second metal silicidelayer. In an embodiment, the second source/drain structure in the secondactive area has a second vertical height greater than a first verticalheight of the first source/drain structure in the first active area. Inan embodiment, a third source/drain structure is formed neighboring thefirst source/drain structure in the first active area and a fourthsource/drain structure is formed neighboring the second source/drainstructure in the second active area, wherein the third source/drainstructure has a third vertical height greater than a fourth verticalheight of the fourth source/drain structure. In an embodiment, a firststep height is defined between the third vertical height and the firstvertical height in the first active area and a second step height isdefined between the fourth vertical height and the second verticalheight in the second active area, wherein the first step height is atleast about 5% higher than the second step height.

In yet another embodiment, a method for forming a semiconductor deviceincludes etching a first and a second source/drain structures on a firstand a second fin structures in a first and a second active region,respectively, on a substrate by an etching gas mixture including asulfur containing passivation gas, wherein the etching gas mixtureetches the first source/drain structure at a faster etching rate thanetching the second source/drain structure, the etching forming the firstsource/drain structure in the first active region having a firstvertical height less than a second vertical height formed in the secondsource/drain structure in the second active region. In an embodiment,the sulfur containing passivation gas selectively reacts with the secondsource/drain structure in the second active region, forming apassivation layer on the second source/drain structure while patterningthe first source/drain structure in the first active region. In anembodiment, the sulfur containing passivation gas is carbonyl sulfide.In an embodiment, prior to etching the first and the second source/drainstructures, a third source/drain structure is formed neighboring thefirst source/drain structure in the first active region, and a fourthsource/drain structure is formed neighboring the second source/drainstructure in the second active region, wherein the third source/drainstructure has a third vertical height greater than a fourth verticalheight of the fourth source/drain structure. In an embodiment, a firststep height is defined between the third vertical height and the firstvertical height in the first active area, and a second step height isdefined between the fourth vertical height and the second verticalheight in the second active area, wherein the first step height is atleast about 5% higher than the second step height.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1.-15. (canceled)
 16. A method for forming a semiconductor device,comprising: etching a first and a second source/drain structures on afirst and a second fin structures in a first and a second active region,respectively, on a substrate by an etching gas mixture including asulfur containing passivation gas, wherein the etching gas mixtureetches the first source/drain structure at a faster etching rate thanetching the second source/drain structure, the etching forming the firstsource/drain structure in the first active region having a firstvertical height less than a second vertical height formed in the secondsource/drain structure in the second active region.
 17. The method ofclaim 16, wherein the sulfur containing passivation gas selectivelyreacts with the second source/drain structure in the second activeregion, forming a passivation layer on the second source/drain structurewhile patterning the first source/drain structure in the first activeregion.
 18. The method of claim 17, wherein the sulfur containingpassivation gas is carbonyl sulfide.
 19. The method of claim 16, furthercomprising: prior to etching the first and the second source/drainstructures, forming a third source/drain structure neighboring the firstsource/drain structure in the first active region, and forming a fourthsource/drain structure neighboring the second source/drain structure inthe second active region, wherein the third source/drain structure has athird vertical height greater than a fourth vertical height of thefourth source/drain structure.
 20. The method of claim 19, wherein afirst step height is defined between the third vertical height and thefirst vertical height in the first active area, and a second step heightis defined between the fourth vertical height and the second verticalheight in the second active area, wherein the first step height is atleast about 5% higher than the second step height.
 21. The method ofclaim 16, wherein the first source/drain structure is n-type and thesecond source/drain structure is p-type.
 22. The method of claim 16,wherein the etching gas mixture comprises carbon fluorine gas.
 23. Amethod for forming a semiconductor device, the method comprising:forming a first fin on a substrate; forming a second fin on thesubstrate; epitaxially growing a first source/drain region on the firstfin; epitaxially growing a second source/drain region on the second fin,wherein the first source/drain region has a first vertical heightgreater than a second vertical height of the second source/drain region;and etching the first source/drain region and the second source/drainregion, wherein the etching etches the first source/drain region at afaster rate than the second source/drain region.
 24. The method of claim23, wherein after etching the first source/drain region has a first stepheight greater than a second step height of the second source/drainregion.
 25. The method of claim 24, wherein a ratio of the first stepheight to the second step height is greater than 1.1.
 26. The method ofclaim 25, wherein the first vertical height is 8% to 20% greater thanthe second vertical height.
 27. The method of claim 23, wherein thefirst source/drain region is n-type and the second source/drain regionis p-type.
 28. The method of claim 23, wherein etching is performedusing a carbon fluorine gas, an oxygen containing gas, an inert gas, anda passivation gas.
 29. The method of claim 28, wherein: the carbonfluorine gas is CF₄, the oxygen containing gas is O₂, the inert gas isAr, and and the passivation gas is COS.
 30. A method for forming asemiconductor device, the method comprising: forming a first fin on asubstrate; forming a second fin on the substrate; epitaxially growing afirst source/drain region on the first fin; epitaxially growing a secondsource/drain region on the second fin; forming a first dielectric layerover the first source/drain region and the second source/drain region;forming a first opening and a second opening in the first dielectriclayer, wherein forming the first opening and the second openingcomprises etching the first source/drain region and the secondsource/drain region, wherein the etching etches the first source/drainregion at a faster rate than the second source/drain region; and forminga first contact in the first opening and a second contact in the secondopening, wherein a first contact area between the first contact and thefirst source/drain region is greater than a second contact area betweenthe second contact and the second source/drain region.
 31. The method ofclaim 30, wherein, after forming the first opening and the secondopening, a first step height of the first source/drain region is greaterthan a second step height of the second source/drain region.
 32. Themethod of claim 31, wherein, prior to forming the first opening and thesecond opening, a first vertical height of the first source/drain regionis greater than a second vertical height of the second source/drainregion.
 33. The method of claim 30, forming the first opening and thesecond opening comprises etching using a sulfur containing gas.
 34. Themethod of claim 33, wherein forming the first opening and the secondopening forms a passivation layer over the second source/drain regionwhile etching the first source/drain region.
 35. The method of claim 30,wherein after forming the first opening and the second opening, a firstheight of remaining portions of the first source/drain region is lessthan a second height of remaining portions of the second source/drainregion.